SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

摘要

According to one embodiment, the electrodes are provided in the first semiconductor layer and extend in a first direction. The gate electrodes are provided on the electrodes and extend in the first direction. The interconnection is provided outside ends in the first direction of the gate electrodes, extends in a second direction crossing the first direction, and is commonly connected to the electrodes. The gate contacts are provided on the gate electrodes and connected to the gate electrodes.

主权项

1. A semiconductor device comprising:
a semiconductor layer including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type provided on the first semiconductor layer, and a third semiconductor layer of the first conductivity type provided on the second semiconductor layer; a plurality of electrodes provided in the first semiconductor layer and extending in a first direction; an insulating film provided between the electrodes and the first semiconductor layer; a plurality of gate electrodes provided on the electrodes, opposed to the second semiconductor layer and the third semiconductor layer, and extending in the first direction; a gate insulating film provided between the gate electrodes and the second semiconductor layer, and between the gate electrodes and the third semiconductor layer; a first interlayer insulating film provided between the electrodes and the gate electrodes; an interconnection provided outside ends in the first direction of the gate electrodes, extending in a second direction crossing the first direction, and commonly connected to the electrodes; a second interlayer insulating film provided between the ends of the gate electrodes and the interconnection; and a plurality of gate contacts provided on the gate electrodes and connected to the gate electrodes.