Substrate processing apparatus

摘要

A substrate processing apparatus includes first and second polishing units for polishing a peripheral portion of a substrate, a primary cleaning unit for cleaning the substrate, a secondary cleaning and drying unit for drying the substrate cleaned in the primary cleaning unit, and a measurement unit for measuring the peripheral portion of the substrate. The measurement unit includes a mechanism for measurement required for polishing in the first and second polishing units, such as a diameter measurement mechanism, a cross-sectional shape measurement mechanism, or a surface condition measurement mechanism.

主权项

1. A substrate processing method comprising:
measuring a peripheral portion of a substrate in a measurement unit to obtain a measurement value, said measuring comprising measuring a cross-sectional shape of the peripheral portion of the substrate; determining first polishing conditions for an upper inclined portion of a bevel portion, a lower inclined portion of the bevel portion, and a side surface of the bevel portion, said determining the first polishing conditions being based on the measurement value obtained by said measuring of the peripheral portion of the substrate in the measurement unit; predicting a polished shape of the peripheral portion of the substrate by calculating an expected polishing amount based on the cross-sectional shape of the peripheral portion of the substrate and the first polishing conditions; judging from the predicted polishing shape whether unpolished portions of the peripheral portion of the substrate will be produced at a first boundary between the upper inclined portion of the bevel portion and the side surface of the bevel portion and at a second boundary between the lower inclined portion of the bevel portion and the side surface of the bevel portion; determining based on said judging that the unpolished portions will be produced; and determining second polishing conditions for polishing the unpolished portions of the upper inclined portion of a bevel portion, the lower inclined portion of the bevel portion, the side surface of the bevel portion, the first boundary, and the second boundary, the second polishing conditions including the first polishing conditions and additional polishing conditions; and polishing the peripheral portion of the substrate based on the second polishing conditions by pressing a polishing tape held by a polishing head against the peripheral portion of the substrate in a polishing unit.