Semiconductor device and method of manufacturing the same

摘要

Disclosed are semiconductor devices and methods of manufacturing the same. The semiconductor device includes: a first conductive type semiconductor layer including a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; a V-pit passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pit; and an active layer interposed between the first and second conductive type semiconductor layers with the V-pit passing through the active layer. The first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and includes a V-pit generation layer comprising a starting point of the V-pit. The semiconductor device includes the V-pits having a large size and a high density to efficiently preventing damage to the semiconductor device due to electrostatic discharge.

主权项

1. A semiconductor device comprising:
a first conductive type semiconductor layer comprising a first lower conductive type semiconductor layer and a first upper conductive type semiconductor layer; V-pits passing through at least one portion of the first upper conductive type semiconductor layer; a second conductive type semiconductor layer placed over the first conductive type semiconductor and filling the V-pits; and an active layer interposed between the first and second conductive type semiconductor layers, the V-pits passing through the active layer, wherein the first upper conductive type semiconductor layer has a higher defect density than the first lower conductive type semiconductor layer and comprises a V-pit generation layer comprising starting points of the V-pits, wherein the first upper conductive type semiconductor layer further comprises a super-lattice layer placed over the V-pit generation layer, and wherein the first upper conductive type semiconductor layer further comprises a low-temperature growth doping layer interposed between the V-pit generation layer and the superlattice layer.