发明名称 Apparatus fabrication using localized annealing
摘要 A method for fabricating an apparatus using radiation annealing includes forming an annealable layer on a substrate. A radiation absorbing layer is also formed on the substrate, wherein the radiation absorbing layer heats up In response to radiation, and the radiation absorbing layer is formed adjacent to at least a portion of the annealable layer and non-adjacent to a portion of the apparatus. Radiation is directed toward the apparatus to heat up the radiation absorbing layer to anneal the at least a portion of the annealable layer that is adjacent to the radiation absorbing layer without annealing the portion of the apparatus that is non-adjacent to the radiation absorbing layer.
申请公布号 US9288848(B2) 申请公布日期 2016.03.15
申请号 US201314144720 申请日期 2013.12.31
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 Theodore Nirmal David
分类号 H01L21/00;B05B5/00;H05B6/64;H01L21/67 主分类号 H01L21/00
代理机构 The Mason Group Patent Specialist LLC 代理人 Davis Valerie M.;The Mason Group Patent Specialist LLC
主权项 1. A method for fabricating an electrical or electronic apparatus using radiation annealing, the method comprising: forming an electrically activatable annealable layer on a substrate; forming a radiation absorbing layer on the substrate, wherein the radiation absorbing layer heats up in response to radiation, and the radiation absorbing layer is permanently formed adjacent to at least a portion of the annealable layer and non-adjacent to a portion of the electrical or electronic apparatus, wherein the annealable layer and the radiation layer are included in a first pair of layers; forming at least one additional pair of layers on the substrate, wherein each additional pair of layers includes another annealable layer and another radiation absorbing layer; directing radiation toward the electrical or electronic apparatus to, for each pair of layers, heat up the radiation absorbing layer to anneal the at least a portion of the annealable layer that is adjacent to the radiation absorbing layer without annealing the portion of the apparatus that is non-adjacent to the radiation absorbing layer.
地址 Austin TX US