发明名称 Method and apparatus for characterizing thermal marginality in an integrated circuit
摘要 Apparatus and methods are described herein for emulating the hot spot distribution of a functional test by applying vectors for structural test to an integrated circuit (IC). The affects of the hot spots can then be tested and characterized. The vectors may be generated on the IC, or may be fed to the IC via an external source.
申请公布号 US9285418(B2) 申请公布日期 2016.03.15
申请号 US201313793880 申请日期 2013.03.11
申请人 QUALCOMM Incorporated 发明人 Chakraborty Tapan J;Sethuram Rajamani;Radojcic Ratibor
分类号 G01R31/26;H01L21/66;G01R31/28 主分类号 G01R31/26
代理机构 代理人 Wong Chui-kiu Teresa;Holdaway Paul
主权项 1. A method for testing integrated circuit (IC) performance, comprising: generating, via a design-for-test structure on the IC, one or more thermal hot spots in one or more core blocks of the IC based on a received thermal profile, wherein the generating the one or more thermal hot spots in one or more core blocks comprises exciting at least one core block of the IC by using test vectors that mimic a functional operation of the at least one core block; and initiating one or more through-silicon-via (TSV) tests on one or more components of the IC over a range of voltage and frequency values when at least one of the one or more thermal hot spots is present.
地址 San Diego CA US