| 发明名称 | Phase changing on-chip thermal heat sink | ||
| 摘要 | A method of forming an on-chip heat sink includes forming a device on a substrate. The method also includes forming a plurality of insulator layers over the device. The method further includes forming a heat sink in at least one of the plurality of insulator layers and proximate to the device. The heat sink includes a reservoir of phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip. | ||
| 申请公布号 | US9287141(B2) | 申请公布日期 | 2016.03.15 |
| 申请号 | US201414528078 | 申请日期 | 2014.10.30 |
| 申请人 | International Business Machines Corporation | 发明人 | Dahlstrom Mattias E. |
| 分类号 | H01L29/00;H01L21/48;H01L21/58;H01L23/367;H01L23/427;H01L21/768;H01L23/373;H01L49/02;H01L23/00;H01L23/36;H01L23/522 | 主分类号 | H01L29/00 |
| 代理机构 | Roberts Mlotkowski Safran & Cole, P.C. | 代理人 | Meyers Steven;Roberts Mlotkowski Safran & Cole, P.C. |
| 主权项 | 1. A semiconductor structure, comprising: a device on a substrate of an integrated circuit chip; and a heat sink proximate to the device, wherein the heat sink comprises a core composed of a phase change material having a melting point temperature that is less than an upper limit of a design operating temperature of the chip, the heat sink comprises a liner that encapsulates the core, the substrate is composed of a semiconductor material comprising silicon, and the heat sink is completely contained in one or more insulator layers over the device, further comprising electrically conductive elements in the one or more insulator layers that provide an electrically conductive pathway to the device. | ||
| 地址 | Armonk NY US | ||