| 发明名称 |
PATTERN FORMING METHOD, PHOTOMASK, AND TEMPLATE FOR NANOIMPRINT |
| 摘要 |
A pattern forming method includes forming a first region and a second region on a to-be-processed layer. The first region includes a guide pattern. In the second region, an affinity to one of the first segment and the second segment which are included in a self-assembly material, is higher than the affinity to the other. The self-assembly material is applied onto the first region and the second region. The self-assembly material is phase-separated into a first domain including the first segment, and a second domain including the second segment. Any one of the first domain and the second domain is selectively removed. |
| 申请公布号 |
US2016068429(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514636086 |
申请日期 |
2015.03.02 |
| 申请人 |
KABUSHIKI KAISHA TOSHIBA |
发明人 |
TERAYAMA Masatoshi;SUENAGA Machiko;MOTOKAWA Takeharu;SAKURAI Hideaki |
| 分类号 |
C03C15/00;G03F1/80;C03C17/38 |
主分类号 |
C03C15/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A pattern forming method comprising:
forming, on a to-be-processed layer, a first region that includes a guide pattern, and a second region having a greater affinity to one of a first segment or a second segment which are included in a self-assembly material; applying the self-assembly material onto the first region and the second region; phase-separating the self-assembly material into a first domain including the first segment, and a second domain including the second segment; and selectively removing any one of the first domain and the second domain. |
| 地址 |
Tokyo JP |
