| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A method for manufacturing a semiconductor device is provided. The method includes forming, on a substrate, a plurality of fins extending along a first direction; forming, on the fins, a dummy gate stack extending along a second direction; forming a gate spacer on opposite sides of the dummy gate stack in the first direction; epitaxially growing raised source/drain regions on the top of the fins on opposite sides of the gate spacer in the first direction; performing lightly-doping ion implantation through the raised source/drain regions with the gate spacer as a mask, to form source/drain extension regions in the fins on opposite sides of the gate spacer in the first direction; removing the dummy gate stack to form a gate trench; and forming a gate stack in the gate trench. |
| 申请公布号 |
US2016071952(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514725666 |
申请日期 |
2015.05.29 |
| 申请人 |
Institute of Microelectronics, Chinese Academy of Sciences |
发明人 |
Yin Huaxiang;Qin Changliang;Ma Xiaolong;Wang Guilei;Zhu Huilong |
| 分类号 |
H01L29/66;H01L21/265 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, comprising the steps of:
forming, on a substrate, a plurality of fins extending along a first direction; forming, on the fins, a dummy gate stack extending along a second direction; forming a gate spacer on opposite sides of the dummy gate stack in the first direction; epitaxially growing raised source/drain regions on the top of the fins on opposite sides of the gate spacer in the first direction; performing lightly-doping ion implantation through the raised source/drain regions with the gate spacer as a mask, to form source/drain extension regions in the fins on opposite sides of the gate spacer in the first direction; removing the dummy gate stack to form a gate trench; and forming a gate stack in the gate trench. |
| 地址 |
Beijing CN |
