| 发明名称 |
MANUFACTURING METHOD OF HIGH ELECTRON MOBILITY TRANSISTOR |
| 摘要 |
A manufacturing method of a high electron mobility transistor includes: forming a GaN channel layer on a semi-insulating substrate in a first growth condition; forming a transition layer on the GaN channel layer while the first growth condition is changed to a second growth condition; and forming an AlGaN electron supply layer on the transition layer in the second growth condition, wherein the GaN channel layer, the transition layer, and the AlGaN electron supply layer are continuously formed without interrupting growth. |
| 申请公布号 |
US2016071727(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514720177 |
申请日期 |
2015.05.22 |
| 申请人 |
Mitsubishi Electric Corporation |
发明人 |
YAMAMOTO Takahiro;OHNO Akihito;ERA Atsushi |
| 分类号 |
H01L21/02;H01L29/66 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A manufacturing method of a high electron mobility transistor comprising:
forming a GaN channel layer on a semi-insulating substrate in a first growth condition; forming a transition layer on the GaN channel layer while the first growth condition is changed to a second growth condition; and forming an AlGaN electron supply layer on the transition layer in the second growth condition, wherein the GaN channel layer, the transition layer, and the AlGaN electron supply layer are continuously formed without interrupting growth. |
| 地址 |
Tokyo JP |
