| 发明名称 |
Metal-Insulator-Metal Capacitor with Current Leakage Protection |
| 摘要 |
A metal insulator metal (MIM) capacitor includes a top electrode, a first via contacting a first surface of the top electrode, a bottom electrode, a second via contacting a second surface of the bottom electrode, and an insulator between the top electrode and the bottom electrode. One of the top and the bottom electrodes includes a first part and a second part. The first part has a first edge and a second edge opposing the first edge. The second part shares the second edge with the first part. At least a portion of the first edge contacts the respective via, and a first one of the first and the second edges is longer than a second one of the first and the second edges. |
| 申请公布号 |
US2016071920(A1) |
申请公布日期 |
2016.03.10 |
| 申请号 |
US201514929601 |
申请日期 |
2015.11.02 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Wang Chen-Jong;Chu Huey-Chi;Chen Kuo-Ji;Song Ming-Hsiang;Chiang Wen-Chuan |
| 分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A metal insulator metal (MIM) capacitor, comprising:
a top electrode; a first via contacting a first surface of the top electrode; a bottom electrode; a second via contacting a second surface of the bottom electrode; and an insulator between the top electrode and the bottom electrode, wherein one of the top and the bottom electrodes comprises a first part and a second part, the first part having a first edge and a second edge opposing the first edge, the second part sharing the second edge with the first part, wherein at least a portion of the first edge contacts the respective via, and wherein a first one of the first and the second edges is longer than a second one of the first and the second edges. |
| 地址 |
Hsin-Chu TW |
