| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile storage device in which a write operation is realized with high reliability.SOLUTION: A nonvolatile storage device comprises: a first wiring layer 10; a second wiring layer 20; a metal ion source layer 30 provided between wirings of the first wiring layer 10 and the second wiring layer 20; a resistance change layer 40 provided between the metal ion source layer 30 and the first wiring layer 10 and in which metal ions discharged from the metal ion source layer 30 can diffuse into the inside thereof; and a control circuit unit 80 for changing the duration of a set or a reset voltage applied to between wirings and writing multi-value data to the resistance change layer 40 when performing a set operation for writing data to the resistance change layer 40, and reading out the multi-value data on the basis of a difference in the read voltage applied to between wirings when performing a read operation for reading out each of the multi-value data.SELECTED DRAWING: Figure 1 |
