PROCESS GAS ENHANCEMENT FOR BEAM TREATMENT OF A SUBSTRATE

摘要

A beam processing system and method of operating are described. In particular, the beam processing system includes a beam source having a nozzle assembly that is configured to introduce a primary gas through the nozzle assembly to a vacuum vessel in order to produce a gaseous beam, such as a gas cluster beam, and optionally, an ionizer positioned downstream from the nozzle assembly, and configured to ionize the gaseous beam to produce an ionized gaseous beam. The beam processing system further includes a process chamber within which a substrate is positioned for treatment by the gaseous beam, and a secondary gas source, wherein the secondary gas source includes a secondary gas supply system that delivers a secondary gas, and a secondary gas controller that operatively controls the flow of the secondary gas injected into the beam processing system downstream of the nozzle assembly.

主权项

1. A method of treating a substrate, comprising:
providing a substrate in a processing chamber of a beam processing system; forming a gaseous beam by expanding a primary gas through at least one nozzle into the beam processing system; supplying a secondary gas to the beam processing system at a location downstream from an exit of the at least one nozzle; and independent of the supplying, irradiating the gaseous beam onto an exposed surface of the substrate to treat an exposed surface of the substrate in the presence of the secondary gas, wherein the secondary gas comprises a hydrogen-containing gas or vapor, the hydrogen-containing gas or vapor being selected from the group consisting of atomic hydrogen (H), metastable hydrogen (H*), ionic hydrogen (H+), diatomic hydrogen (H2), H2O, NH3, a hydrocarbon, a halide, a halomethane, or a halosilane, or any combination of two or more thereof.