Methods of manufacturing semiconductor devices

摘要

In a method of manufacturing a semiconductor device, an insulating interlayer is formed on a substrate. The insulating interlayer is partially removed to form an opening. A barrier conductive layer is formed on a sidewall and a bottom of the opening. An RF sputtering process and a DC sputtering process are performed independently on the barrier conductive layer to form a seed layer. A plated layer is formed on the seed layer.

主权项

1. A method of manufacturing a semiconductor device, comprising:
forming an insulating interlayer on a substrate; partially removing the insulating interlayer to form an opening; forming a barrier conductive layer on a sidewall and a bottom of the opening; performing a radio frequency (RF) sputtering process and a direct current (DC) sputtering process independently on the barrier conductive layer to form a seed layer; and forming a plated layer on the seed layer.