Apparatus and method for fabricating wafer

摘要

A method for fabricating a wafer according to the embodiment comprises the steps of depositing an epi layer in an epi deposition part; transferring the wafer to an annealing part connected to the epi deposition part; annealing the wafer in the annealing part; transferring the wafer to a cooling part connected to the annealing part; and cooling the wafer in the cooling part, wherein the depositing of the wafer, the annealing of the wafer and the cooling of the wafer are continuously performed. An apparatus for fabricating a wafer according to the embodiment comprises an epi deposition part; an annealing part connected to the epi deposition part; and a cooling part connected to the annealing part.

主权项

1. A method for fabricating a wafer, the method comprising:
depositing an epi layer on a wafer in an epi deposition part; transferring the wafer to an annealing part connected to the epi deposition part; annealing the wafer in the annealing part; transferring the wafer to a cooling part connected to the annealing part; and cooling the wafer in the cooling part; wherein the depositing of the wafer, the annealing of the wafer, and the cooling of the wafer are continuously performed; wherein a passage between the epi disposition part and the annealing part is blocked by a first blocking member, wherein a passage between the annealing part and the cooling part is blocked by a second blocking member, wherein the epi layer is a silicon carbide epi layer, wherein a growth temperature of the epi deposition part is in a range of from about 1300° C. to about 1700° C., wherein the epi deposition part deposits a silicon carbide epi layer, wherein the wafer is transferred by a wafer transfer apparatus, and wherein the wafer transfer apparatus is formed of a material that endures the growth temperature of the range of from about 1300° C. to about 1700° C.