发明名称 FERROELECTRTRIC MATERIAL, ITS PRODUCTION AND FERROELECTRIC MEMORY
摘要 PROBLEM TO BE SOLVED: To produce a ferroelectric material capable of improving fatigue characteristics and easily forming a capacitor electrode when it is used as a capacitor insulating film, and to provide a ferroelectric memory. SOLUTION: This ferroelectric material is obtained by substituting and solid- dissolving Al to the material expressed by the formula, PbxZr(1-y)TiyO3, wherein x and y represent molar ratio and x is 0.9-1.1 and y is 0.3-0.7. The ferroelectric memory has a capacitor insulating film formed with the ferroelectric material having a film the thickness of 50-500 nm.
申请公布号 JP2000109362(A) 申请公布日期 2000.04.18
申请号 JP19980284560 申请日期 1998.10.06
申请人 YAMAHA CORP;AGENCY OF IND SCIENCE & TECHNOL 发明人 HIYAMA KUNIO;TSUBOI HIDEKI;OKADA MASUHIRO;SANADA TOKUO;IIJIMA TAKASHI
分类号 H01L27/108;C04B35/49;G11C11/22;H01B3/12;H01L21/8242 主分类号 H01L27/108
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