发明名称 |
FERROELECTRTRIC MATERIAL, ITS PRODUCTION AND FERROELECTRIC MEMORY |
摘要 |
PROBLEM TO BE SOLVED: To produce a ferroelectric material capable of improving fatigue characteristics and easily forming a capacitor electrode when it is used as a capacitor insulating film, and to provide a ferroelectric memory. SOLUTION: This ferroelectric material is obtained by substituting and solid- dissolving Al to the material expressed by the formula, PbxZr(1-y)TiyO3, wherein x and y represent molar ratio and x is 0.9-1.1 and y is 0.3-0.7. The ferroelectric memory has a capacitor insulating film formed with the ferroelectric material having a film the thickness of 50-500 nm. |
申请公布号 |
JP2000109362(A) |
申请公布日期 |
2000.04.18 |
申请号 |
JP19980284560 |
申请日期 |
1998.10.06 |
申请人 |
YAMAHA CORP;AGENCY OF IND SCIENCE & TECHNOL |
发明人 |
HIYAMA KUNIO;TSUBOI HIDEKI;OKADA MASUHIRO;SANADA TOKUO;IIJIMA TAKASHI |
分类号 |
H01L27/108;C04B35/49;G11C11/22;H01B3/12;H01L21/8242 |
主分类号 |
H01L27/108 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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