| 摘要 |
PROBLEM TO BE SOLVED: To provide a substrate processing device and a substrate processing method which make possible to correctly perform the process of selectively etching, of a silicon oxide film and a silicon nitride film on a substrate, the silicon nitride film.SOLUTION: A substrate processing device comprises: a production tank 80 in which a phosphoric acid aqueous solution is stored; and a filtering member 87 formed by a porous material having a pore diameter equal to or smaller than that of a filter 82, in which a silicon-containing solution including silicon particles is inserted, provided that at least part of the filtering member 87 is immersed in the phosphoric acid aqueous solution stored in the production tank 80. In the substrate processing device, the silicon-containing solution passes through the filtering member 87 and mixes with the phosphoric acid aqueous solution, whereby a process liquid for selectively removing, of a silicon oxide and a silicon nitride, the silicon nitride is produced; and impurities in the process liquid thus produced are removed by the filter 82. The substrate processing device further comprises a processing part 1 which supplies a substrate W with the process liquid with the impurities removed by the filter 82.SELECTED DRAWING: Figure 1 |
