发明名称 |
MULTI-CHIP SILICON SUBSTRATE-LESS CHIP PACKAGING |
摘要 |
Examples generally provide a stacked silicon interconnect product and method of manufacture. The stacked silicon interconnect product includes a silicon substrate-less interposer comprising a plurality of metallization layers, wherein at least one metallization layer includes a plurality of metal segments separated by dielectric material. The stacked silicon interconnect product also includes a first die coupled to a first side of the silicon substrate-less interposer via a first plurality of microbumps. The stacked silicon interconnect product further includes a second die coupled to a second side of the silicon substrate-less interposer via a second plurality of microbumps, the second die communicatively coupled to the first die through a metallization layer of the plurality of metallization layers. |
申请公布号 |
US2016064328(A1) |
申请公布日期 |
2016.03.03 |
申请号 |
US201414469500 |
申请日期 |
2014.08.26 |
申请人 |
Xilinx, Inc. |
发明人 |
Kwon Woon-Seong;Ramalingam Suresh |
分类号 |
H01L23/538;H01L25/07;H01L25/00;H01L23/00 |
主分类号 |
H01L23/538 |
代理机构 |
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代理人 |
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主权项 |
1. A stacked silicon interconnect product, comprising:
a silicon substrate-less interposer comprising a plurality of metallization layers, wherein at least one metallization layer includes a plurality of metal segments separated by dielectric material; a first die coupled to a first side of the silicon substrate-less interposer via a first plurality of microbumps; and a second die coupled to a second side of the silicon substrate-less interposer via a second plurality of microbumps, the second die communicatively coupled to the first die through a metallization layer of the plurality of metallization layers. |
地址 |
San Jose CA US |