MATERIALS AND COMPONENTS IN PHASE CHANGE MEMORY DEVICES

摘要

Phase change memory cells, structures, and devices having a phase change material and an electrode forming an ohmic contact therewith which includes carbon and tungsten doped with nitrogen are disclosed and described. Such electrodes have a low contact resistance with the phase change material and a high thermal stability from room temperature to temperatures needed for programming operations.

主权项

1. A phase change memory structure, comprising:
a phase change material of a memory cell; and an electrode forming an Ohmic contact with the phase change material, the electrode comprising tungsten and carbon and being doped with nitrogen.