发明名称 Biasing split gate memory cell during power-off mode
摘要 A non-volatile memory (NVM) system (100) has a normal mode, a standby mode and an off mode that uses less power than the standby mode. The NVM system includes NVM peripheral circuitry (102, 106, 110), a controller (108), and an NVM array (104) that includes NVM cells (302, 304, 306, 308, 310, and 312) and. Each NVM cell includes a control gate. The controller is coupled to the NVM array, applies a voltage to the control gates and power to the peripheral circuitry during the standby mode, and applies an off-mode voltage to the control gates and removes power from the NVM peripheral circuitry during the off mode.
申请公布号 EP2800098(B1) 申请公布日期 2016.03.02
申请号 EP20140165574 申请日期 2014.04.23
申请人 FREESCALE SEMICONDUCTOR, INC. 发明人 HONG, CHEONG MIN;GASQUET, HORATIO P.;SYZDEK, RONALD J.
分类号 G11C16/08;G11C7/04;G11C7/12;G11C11/56;G11C16/22;G11C16/30;G11C16/34 主分类号 G11C16/08
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