Semiconductor devices and methods of manufacturing the same

摘要

A semiconductor device includes a substrate with an active pattern, the active pattern having a first extension portion extending in a first direction substantially parallel to a top surface of the substrate, a second extension portion extending from a first end of the first extension portion in a third direction oriented obliquely to the first direction, a third extension portion extending from a second end of the first extension portion in a direction opposed to the third direction, a first projection portion protruding from the second extension portion in a direction opposed to the first direction, the first projection portion being spaced apart from the first extension portion, and a second projection portion protruding from the third extension portion in the first direction, the second projection portion being spaced apart from the first extension portion.

主权项

1. A semiconductor device, comprising:
a substrate including an active pattern surrounded by an isolation layer, the isolation layer being disposed at an upper portion of the substrate, wherein the active pattern includes:
a first extension portion extending in a first direction substantially parallel to a top surface of the substrate,a second extension portion extending from a first end of the first extension portion in a third direction oriented obliquely to the first direction,a third extension portion extending from a second end of the first extension portion in a direction opposed to the third direction,a first projection portion protruding from the second extension portion in a direction opposed to the first direction, the first projection portion being spaced apart from the first extension portion, anda second projection portion protruding from the third extension portion in the first direction, the second projection portion being spaced apart from the first extension portion; a bit line extending in the first direction above the substrate; and a contact connecting the bit line with the first extension portion of the active pattern, wherein the contact comprises a first width, in a second direction perpendicular to the first direction, that is wider than a second width of the first extension portion of the active pattern in the second direction.