Semiconductor light emitting element and method of manufacturing semiconductor light emitting element

摘要

A semiconductor light emitting element includes a laminated semiconductor layer including a light emitting layer that emits light by passing a current, the laminated semiconductor layer has a lower semiconductor bottom surface, a semiconductor side surface that rises from an edge of the lower semiconductor bottom surface upwardly and outwardly of the laminated semiconductor layer, and a lower semiconductor top surface that faces upward by extending inwardly of the laminated semiconductor layer from an upper edge of the semiconductor side surface, an edge of the lower semiconductor top surface includes first and second linear portions extending linearly and plural connecting portions connecting the first and second linear portions, and, when viewed from a direction perpendicular to the lower semiconductor top surface, each connecting portion is positioned inside a point of intersection of extended lines of the first and second linear portions connected to the connecting portion.

主权项

1. A semiconductor light emitting element provided with a semiconductor layer including a light emitting layer that emits light by passing a current, wherein
the semiconductor layer has a semiconductor bottom surface, a semiconductor side surface that rises from a first edge of the semiconductor bottom surface upwardly and outwardly of the semiconductor layer, and a semiconductor top surface that faces upward by extending inwardly of the semiconductor layer from a second edge in an upper portion of the semiconductor side surface, and the second edge includes a plurality of linear portions that extend linearly and a plurality of connecting portions, each of which connects adjacent linear portions, and from a view in a direction perpendicular to the semiconductor top surface, each of the plurality of connecting portions is positioned inside a point of intersection of extended lines of two linear portions that are connected to the connecting portions, wherein the semiconductor side surface includes a linear portion side surface that rises from the first edge toward the linear portion in the second edge and a connecting side surface that rises from the first edge toward the connecting portion in the second edge, and the connecting side surface includes an inclined portion that rises from the first edge upwardly and outwardly of the semiconductor layer and a vertical portion that rises from the inclined portion upwardly to the connecting portion in the second edge.