BEOL structures incorporating active devices and mechanical strength

摘要

A method of fabricating a monolithic integrated circuit using a single substrate, the method including forming a first semiconductor layer from a substrate, fabricating semiconductor devices on the substrate, fabricating at least one metal wiring layer on the semiconductor devices, forming at least one dielectric layer in integral contact with the at least one metal wiring layer, forming contact openings through the at least one dielectric layer to expose regions of the at least one metal wiring layer, integrally forming, from the substrate, a second semiconductor layer on the dielectric layer, and in contact with the at least one metal wiring layer through the contact openings, and forming a plurality of non-linear semiconductor devices in said second semiconductor layer.

主权项

1. A method of fabricating a monolithic integrated circuit using a single substrate, the method comprising:
forming a first semiconductor layer from a substrate; fabricating semiconductor devices on the substrate; fabricating at least one metal wiring layer on the semiconductor devices; forming at least one dielectric layer in integral contact with the at least one metal wiring layer; forming contact openings through the at least one dielectric layer to expose regions of the at least one metal wiring layer; integrally forming, from the substrate, a second semiconductor layer on the dielectric layer, and in contact with the at least one metal wiring layer through the contact openings; and forming a plurality of non-linear semiconductor devices in said second semiconductor layer.