发明名称 |
FIELD-EFFECT TRANSISTOR AND METHOD FOR PRODUCING FIELD-EFFECT TRANSISTOR |
摘要 |
To provide a field-effect transistor, containing: a gate electrode configured to apply gate voltage; a source electrode and a drain electrode, both of which are configured to take out electric current; an active layer formed of a n-type oxide semiconductor, provided in contact with the source electrode and the drain electrode; and a gate insulating layer provided between the gate electrode and the active layer, wherein work function of the source electrode and drain electrode is 4.90 eV or greater, and wherein an electron carrier density of the n-type oxide semiconductor is 4.0×1017 cm−3 or greater. |
申请公布号 |
SG11201600543Y(A) |
申请公布日期 |
2016.02.26 |
申请号 |
SG11201600543Y |
申请日期 |
2014.07.25 |
申请人 |
RICOH COMPANY, LTD. |
发明人 |
MATSUMOTO, SHINJI;UEDA, NAOYUKI;NAKAMURA, YUKI;TAKADA, MIKIKO;SONE, YUJI;SAOTOME, RYOICHI;ARAE, SADANORI;ABE, YUKIKO |
分类号 |
H01L21/336;H01L21/28;H01L21/288;H01L29/417;H01L29/786 |
主分类号 |
H01L21/336 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|