FLASH MEMORY DEVICE

摘要

A flash memory device is configured to reduce loading of a word line without increasing the size of a region. The flash memory device includes a cell array region including a word line structure; an X-decoder region disposed at one side of the cell array region, and including a pass transistor composed of a gate electrode, a source region, and a drain region; and a metal line coupled not only to the drain region of the pass transistor, but also to one side and the other side of the word line structure.

主权项

1. A flash memory device comprising:
a cell array region including a word line structure extending in a first direction; an X-decoder region disposed at a first side of the cell array region, and including a pass transistor that includes a gate electrode, a source region, and a drain region; and a metal line coupled to the drain region of the pass transistor, and to both the first side and an opposing second side of the word line structure.