| 摘要 |
The present invention relates to a method for forming an RRAM cell having a dielectric data layer providing excellent performance, device yield, and data maintenance, and an apparatus related thereto. In some embodiments, the method is performed by forming an RRAM membrane stack having a bottom electrode layer arranged on a semiconductor substrate, an upper electrode layer, and a dielectric data memory layer arranged between the bottom electrode layer and the upper electrode layer. The dielectric data memory layer has a performance reinforcing layer having a hydrogen-doped oxide, a data maintaining layer having aluminum oxide. The next RRAM membrane stack is patterned along one or more masking layers for forming an upper electrode and a bottom electrode, and formed at the position where an upper metal interconnection layer is electrically contacting with the upper electrode. |
