Semiconductor device and method of manufacturing the same

摘要

A semiconductor device includes a pipe gate, word lines stacked on the pipe gate, first channel layers configured to pass through the word lines, and a second channel layer formed in the pipe gate to connect the first channel layers and having a higher impurity concentration than the first channel layers.

主权项

1. A semiconductor device comprising:
a conductive layer; a plurality of word lines stacked on the conductive layer; a plurality of first channel layers configured to pass through the word lines; and a second channel layer formed in the conductive layer to connect the plurality of first channel layers, and having a higher impurity concentration than the plurality of first channel layers, wherein the conductive layer is configured to surround side and lower surfaces of the second channel layer.