Semiconductor device and manufacturing method thereof

摘要

A method of manufacturing a semiconductor device includes providing a carrier including a first layer, a second layer, a first surface of the first layer and a second surface of the second layer, disposing a plurality of solder bumps on the second surface, disposing a molding between the plurality of solder bumps and over the second surface, cutting the first layer to form a first recess in the first layer, wherein the first recess is above a position between at least two of the plurality of solder bumps, and cutting the molding from a bottom surface of the first recess to form a second recess in the molding between the at least two of the plurality of solder bumps. Further, a semiconductor device includes a carrier including a first layer and a second layer, a plurality of solder bumps disposed on the second layer, a molding disposed over the second layer and surrounding the plurality of solder bumps, the molding includes a protruded portion protruding from a sidewall of the first layer adjacent to an end portion of the first layer.

主权项

1. A method of manufacturing a semiconductor device, comprising:
providing a carrier including a substrate layer, a second layer, a first surface of the substrate layer and a second surface of the second layer; disposing a plurality of solder bumps on the second surface; disposing a molding on the second surface and between the plurality of solder bumps; cutting the substrate layer from the first surface to form a first recess in the substrate layer, wherein the first recess is above a position between at least two of the plurality of solder bumps; and cutting the molding from a bottom surface of the first recess to form a second recess in the molding between the at least two of the plurality of solder bumps.