In situ chamber clean with inert hydrogen helium mixture during wafer process

摘要

Embodiments of the present invention generally relate to a method for cleaning a processing chamber during substrate processing. During a first substrate processing step, a plasma is formed from a gas mixture of argon, helium, and hydrogen in the processing chamber. In a second substrate processing step, an argon plasma is formed in the processing chamber.

主权项

1. A method for cleaning a processing chamber, comprising:
forming a plasma of a gas mixture of argon gas, helium gas, and hydrogen gas in the processing chamber during a first substrate processing step, wherein a temperature of a substrate is less than about 120° C. during the first substrate processing step; and forming a plasma of a gas consisting of argon in the processing chamber during a second substrate processing step, wherein the first substrate processing step removes a native oxide from an aluminum contact pad and a polyimide compound from a surface of the substrate.