METHOD FOR GROWING NITRIDE-BASED SEMICONDUCTOR WITH HIGH QUALITY

摘要

The present invention provides a method for growing a nitride-based semiconductor with a high quality, comprising: a step of forming a first mask layer on a substrate and forming a second mask layer on the first mask layer; a step of forming an open partial area of the substrate by dry-etching the first mask layer and the second mask layer; a step of forming a recess area by exposing a part of the substrate in such a manner where the first mask layer is selectively wet-etched in the opened area; a step of forming a third mask layer in the recess area; and a step of growing the nitride-based semiconductor from the exposed substrate of a lateral surface of the third mask layer to be expanded to the opened area. According to the present invention, a break-through potential caused by lattice constant discordance on the interface between the substrate and the nitride-based semiconductor can be remarkably reduced, and the process fail ratio can be reduced. Moreover, defects on the thin layer are minimized, thereby securing reliability of an optical device.