| 发明名称 |
METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE |
| 摘要 |
A method for manufacturing a semiconductor device includes forming a trench defining a plurality of active fins in a substrate, forming a sacrificial layer on the plurality of active fins, forming a sacrificial oxide layer, and removing the sacrificial oxide layer. The forming the sacrificial oxide layer includes heat-treating the sacrificial layer and surfaces of the plurality of active fins. |
| 申请公布号 |
US2016049336(A1) |
申请公布日期 |
2016.02.18 |
| 申请号 |
US201514825556 |
申请日期 |
2015.08.13 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
HAN Jae Jong;KOO Bon Young;PARK Ki Yeon;PARK Jae Young;LEE Sun Young;CHOI Kyung In |
| 分类号 |
H01L21/8234;H01L21/308 |
主分类号 |
H01L21/8234 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing a semiconductor device, the method comprising:
forming a trench in a substrate, the trench defining a plurality of active fins; forming a sacrificial layer on the plurality of active fins; forming a sacrificial oxide layer on the plurality of active fins, the forming the sacrificial oxide layer including heat-treating the sacrificial layer and surfaces of the plurality of active fins; and removing the sacrificial oxide layer. |
| 地址 |
Suwon-si KR |
