High-Power Electronic Device Packages and Methods

摘要

A high power electronic device package constructed to include a high power electronic device having an epitaxial surface attached to a thermally conductive submount by a thermally conductive interface layer having a eutectic metal contact therein. A gallium nitride high electron mobility transistor (GaN HEMT) having a transistor structure formed of a GaN thin film layer bonded to a thermally conductive host substrate via a thermally conductive interface layer disposed therebetween, and a method of forming the GaN HEMT. The GaN HEMTs can be used in such applications as, for example, power amplifiers with x-band radio frequency (RF) power outputs for micro-radar applications.

主权项

1. A high-power electronic device package, comprising:
a thermally conductive submount having an upper surface and a lower surface; a first thermally conductive interface layer disposed on the upper surface of the thermally conductive submount; a metal frame and a diamond head bonded to the upper surface of the thermally conductive submount via the first thermally conductive interface layer; a second thermally conductive interface layer disposed on the metal frame and the diamond head; at least one eutectic metal contact positioned in at least one via in the second thermally conductive interface layer; and a high-power electronic device having an epitaxial surface, wherein the epitaxial surface is in contact with the at least one eutectic metal contact, and wherein the epitaxial surface is secured to the eutectic metal contact and to the thermally conductive submount by the second thermally conductive interface layer.