HIGH CAPACIY LOW COST MULTI-STATE MAGNETIC MEMORY

摘要

One embodiment of the present invention includes a multi-state current-switching magnetic memory element includes a stack of two or more magnetic tunneling junctions (MTJs), each MTJ having a free layer and being separated from other MTJs in the stack by a seeding layer formed upon an isolation layer, the stack for storing more than one bit of information, wherein different levels of current applied to the memory element causes switching to different states.

主权项

1. A multi-state current-switching magnetic memory element configured to store a state by current flowing therethrough to switch the state comprising:
a first magnetic tunneling junction (MTJ) formed on top of a bottom electrode; a second MTJ, formed on top of the first MTJ and separated from the first MTJ by and an amorphous isolation layer; and a top electrode formed on top of the second MTJ, each of the first and second MTJs having a free layer with a switchable magnetic orientation, a barrier layer and a fixed layer, the first and second MTJs collectively operable to store more than one bit of information wherein each of the first and second MTJs store one bit of information, each of the free layers of the first and second MTJs having a different composition based on the amount of oxide therein, and each of the free layers of the first and second MTJs being responsive to a unique switching current based on the composition of their respective free layer,wherein the free layer switches its magnetic orientation based upon the level of the switching current applied thereto, further wherein different levels of current applied to the multi-state current-switching magnetic memory element causes switching to different states.