发明名称 |
THIN FILM TRANSISTOR AND METHOD FOR MANUFACTURING OF THE SAME |
摘要 |
Provided are a thin film transistor (TFT) and a method of manufacturing the TFT. The TFT according to an embodiment of the present invention includes: a substrate; a first conductive type semiconductor layer on the substrate and having a recess; second conductive type spacers at opposite side walls in the recess; a main semiconductor layer covering the first conductive type semiconductor layer and the second conductive type spacers and comprising a channel region and source and drain regions; a gate insulating layer on the main semiconductor layer; and a gate electrode on the gate insulating layer and corresponding to the recess. |
申请公布号 |
KR20160018928(A) |
申请公布日期 |
2016.02.18 |
申请号 |
KR20140101792 |
申请日期 |
2014.08.07 |
申请人 |
SAMSUNG DISPLAY CO., LTD. |
发明人 |
KU, SUK HOON;CHO, HYUN DUCK |
分类号 |
H01L29/786;H01L21/336 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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