FORMING TRANSISTORS WITHOUT SPACERS AND RESULTING DEVICES

摘要

Methods for forming gates without spacers and the resulting devices are disclosed. Embodiments may include forming a channel layer on a substrate; forming a dummy gate on the channel layer; forming an interlayer dielectric (ILD) on the channel layer and surrounding the dummy gate; forming a trench within the ILD and the channel layer by removing the dummy gate and the channel layer below the dummy gate; forming an un-doped channel region at the bottom of the trench; and forming a gate above the un-doped channel region within the trench.

主权项

1. A method comprising:
forming a channel layer on a substrate; forming a dummy gate on the channel layer; forming an interlayer dielectric (ILD) on the channel layer and surrounding the dummy gate; forming a trench within the ILD and the channel layer by removing the dummy gate and the channel layer below the dummy gate; forming an un-doped channel region at the bottom of the trench; conformally forming a high-k dielectric layer within the trench after forming the un-doped channel region; filling the trench with a metal to form a gate above the un-doped channel region, wherein the gate does not include spacers and the ILD is in direct contact with the high-k dielectric layer.