| 发明名称 |
SEMICONDUCTOR STRUCTURE AND METHOD OF FORMING THE SAME |
| 摘要 |
A method of forming a semiconductor structure includes growing a second III-V compound layer over a first III-V compound layer, wherein the second III-V compound layer has a different band gap from the first III-V compound layer. The method further includes forming a source feature and a drain feature over the second III-V compound layer. The method further includes forming a gate dielectric layer over the second III-V compound layer, the source feature and the drain feature. The method further includes implanting at least one fluorine-containing compound into a portion of the gate dielectric layer. The method further includes forming a gate electrode over the portion of the gate dielectric layer. |
| 申请公布号 |
US2016049505(A1) |
申请公布日期 |
2016.02.18 |
| 申请号 |
US201514926783 |
申请日期 |
2015.10.29 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
WONG King-Yuen;YU Chen-Ju;YAO Fu-Wei;HSU Chun-Wei;YU Jiun-Lei Jerry;HSIUNG Chih-Wen;YANG Fu-Chih |
| 分类号 |
H01L29/778;H01L21/28;H01L29/51;H01L29/66 |
主分类号 |
H01L29/778 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor structure, the method comprising:
growing a second III-V compound layer over a first III-V compound layer, wherein the second III-V compound layer has a different band gap from the first III-V compound layer; forming a source feature and a drain feature over the second III-V compound layer; forming a gate dielectric layer over the second III-V compound layer, the source feature and the drain feature; implanting at least one fluorine-containing compound into a portion of the gate dielectric layer; and forming a gate electrode over the portion of the gate dielectric layer. |
| 地址 |
Hsinchu TW |
