| 摘要 |
The invention relates to a mask (M) for EUV lithography, comprising: a substrate (7), a first surface region (A1), which is formed by a surface (8a) – facing away from the substrate (7) – of a multilayer coating (8) which is designed for reflecting EUV radiation (27), and a second surface region (A2), which is formed by a surface (18a) – facing away from the substrate (7) – of a further coating (18) which is designed for reflecting DUV radiation (28) and for suppressing the reflection of EUV radiation (27). The further coating is a multilayer coating (18). The invention also relates to an EUV lithography apparatus comprising such a mask (M) and to a method for determining a contrast proportion caused by DUV radiation (28) during the imaging of a mask (M) onto a light-sensitive layer. |
