| 摘要 |
The preset invention is to reduce the resistance of a conductor formed in a wiring layer. An insulating layer (ETS1) is formed on a substrate (SUB), and includes SiO_(1-x)N_x, wherein x > 0.5 is satisfied in an analysis result of XRD. A wiring (INC1) is formed on the insulating layer (ETS1), and has a first layer (ML1) and a second layer (ML2). The first layer (ML1) includes at least one of TiN, Tan, Wn, and RuN. The second layer (ML2) is formed on the first layer (ML1), and is made of a material which has a lower resistance than the first layer (ML1), for example, W. |
