Mechanisms for forming metal-insulator-metal (MIM) capacitor structure

摘要

Embodiments of mechanisms for forming a metal-insulator-metal (MIM) capacitor structure are provided. The metal-insulator-metal capacitor structure includes a substrate. The MIM capacitor structure also includes a CBM layer formed on the substrate, and the CBM layer includes a bottom barrier layer, a main metal layer and a top barrier layer. The MIM capacitor structure further includes a first high-k dielectric layer formed on the CBM layer, an insulating layer formed on the first high-k dielectric layer and a second high-k dielectric layer formed on the insulating layer. The MIM capacitor structure also includes a CTM layer formed on the second high-k dielectric layer, and the CBM layer includes a bottom barrier layer, a main metal layer and a top barrier layer.

主权项

1. A device, comprising:
a substrate; and a metal-insulator-metal (MIM) capacitor formed on the substrate, wherein the MIM capacitor comprises:
a capacitor top metal (CTM) layer;a capacitor bottom metal (CBM) layer; andan insulator formed between the CTM layer and the CBM layer, wherein the insulator comprises an insulating layer and a first high-k dielectric layer, and wherein the first high-k dielectric layer is formed between the CBM layer and the insulating layer, or between the CTM layer and the insulating layer, and a thickness of the insulating layer is larger than a thickness of the first high-k dielectric layer.