Semiconductor light-emitting device

摘要

A semiconductor light-emitting device includes a semiconductor region having a light-emitting structure, an electrode layer formed on the semiconductor region, and a reflective protection structure extending exposing the upper surface of the electrode layer and covering the semiconductor region adjacent to the electrode layer.

主权项

1. A semiconductor light-emitting device comprising:
a light-emitting structure comprising a first semiconductor layer, an active layer, and a second semiconductor layer; a first electrode layer disposed on the first semiconductor layer; a second electrode layer disposed on a first region of an upper surface of the second semiconductor layer; a reflective protection structure extending from an upper surface of the second electrode layer to a second region of the upper surface of the second semiconductor layer, the second region surrounding the first region, the reflective protection structure comprising at least one first hole exposing the upper surface of the second electrode; and an insulating film extending from an upper surface of the reflective protection structure to a third region of the upper surface of the second semiconductor layer, the third region surrounding the second region and not being covered with the reflective protection structure, the insulating film comprising at least one second hole communicating with the at least one first hole.