Techniques for forming non-planar germanium quantum well devices

摘要

Techniques are disclosed for forming a non-planar germanium quantum well structure. In particular, the quantum well structure can be implemented with group IV or III-V semiconductor materials and includes a germanium fin structure. In one example case, a non-planar quantum well device is provided, which includes a quantum well structure having a substrate (e.g. SiGe or GaAs buffer on silicon), a IV or III-V material barrier layer (e.g., SiGe or GaAs or AlGaAs), a doping layer (e.g., delta/modulation doped), and an undoped germanium quantum well layer. An undoped germanium fin structure is formed in the quantum well structure, and a top barrier layer deposited over the fin structure. A gate metal can be deposited across the fin structure. Drain/source regions can be formed at respective ends of the fin structure.

主权项

1. A method of forming a non-planar semiconductor device, the method comprising:
selectively etching a quantum well structure to form an active body structure, the quantum well structure having a substrate, a IV or III-V material barrier layer, a doping layer, and a germanium quantum well layer; depositing a top barrier layer of semiconductor material over at least a portion of the active body structure, wherein the top barrier layer covers top and sidewall portions of the active body structure; and forming a gate structure across at least a portion of the top barrier layer, including depositing a gate dielectric.