发明名称 Transparent crystalline electrically-conductive thin film, method of production thereof, transparent electrically-conductive film, and touch panel
摘要 A transparent crystalline electrically-conductive thin film of the present invention comprises an indium tin oxide as a main component, wherein the indium tin oxide contains 9% by weight or less of tin oxide based on the total amount of indium oxide and tin oxide, wherein the transparent crystalline electrically-conductive thin film contains 0.45 atomic % or less of nitrogen. The transparent crystalline electrically-conductive thin film of the present invention has a high resistance value and good reliability in a high-temperature, high-humidity environment.
申请公布号 US9260777(B2) 申请公布日期 2016.02.16
申请号 US200611917110 申请日期 2006.12.27
申请人 NITTO DENKO CORPORATION 发明人 Nashiki Tomotake;Noguchi Tomonori;Sugawara Hideo
分类号 C23C16/00;C23C14/08 主分类号 C23C16/00
代理机构 Westerman, Hattori, Daniels & Adrian, LLP 代理人 Westerman, Hattori, Daniels & Adrian, LLP
主权项 1. A method for producing a transparent crystalline electrically-conductive thin film comprising an indium tin oxide, said method comprising: forming a transparent electrically-conductive thin film of an indium tin oxide by a vapor method, and then crystallizing the transparent electrically-conductive thin film by a heat treatment, wherein the transparent electrically-conductive thin film of an indium tin oxide comprises indium tin oxide as the main component and up to 9% by weight of tin oxide based on the total amount of indium oxide and tin oxide, wherein the vapor method comprises a sintered mixture of indium oxide and tin oxide in an argon atmosphere containing argon gas and nitrogen gas and the nitrogen gas is in an amount of 3000 ppm to 13000 ppm based on the total amount of the argon gas and the nitrogen gas; wherein the transparent crystalline electrically-conductive thin film contains up to 0.45 atomic % of nitrogen, and wherein the transparent crystalline electrically-conductive thin film has a surface resistance of 200 Ω/square or more.
地址 Ibaraki-shi JP