发明名称 |
HIGH-RATE DEPOSITING METHOD OF INORGANIC THIN FILM, AND APPARATUS THEREFOR |
摘要 |
The present invention relates to a high-rate deposition method of an inorganic thin film and a manufacturing apparatus for high-rate deposition of the inorganic thin film. Provided is a method for manufacturing an inorganic thin film, which comprises: plasma treating a base material by using a source gas and a reaction gas; and forming an inorganic thin film on the base material as the source gas and the reaction gas react on a surface of the base material. |
申请公布号 |
KR20160017646(A) |
申请公布日期 |
2016.02.16 |
申请号 |
KR20150187842 |
申请日期 |
2015.12.28 |
申请人 |
RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY |
发明人 |
SEO, SANG JOON;CHO, SUNG MIN;YOO, JI BEOM;CHUNG, HO KYOON |
分类号 |
C23C16/44;C23C16/22;C23C16/455;C23C16/52 |
主分类号 |
C23C16/44 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|