发明名称 HIGH-RATE DEPOSITING METHOD OF INORGANIC THIN FILM, AND APPARATUS THEREFOR
摘要 The present invention relates to a high-rate deposition method of an inorganic thin film and a manufacturing apparatus for high-rate deposition of the inorganic thin film. Provided is a method for manufacturing an inorganic thin film, which comprises: plasma treating a base material by using a source gas and a reaction gas; and forming an inorganic thin film on the base material as the source gas and the reaction gas react on a surface of the base material.
申请公布号 KR20160017646(A) 申请公布日期 2016.02.16
申请号 KR20150187842 申请日期 2015.12.28
申请人 RESEARCH & BUSINESS FOUNDATION SUNGKYUNKWAN UNIVERSITY 发明人 SEO, SANG JOON;CHO, SUNG MIN;YOO, JI BEOM;CHUNG, HO KYOON
分类号 C23C16/44;C23C16/22;C23C16/455;C23C16/52 主分类号 C23C16/44
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