| 摘要 |
The present invention relates to a light emitting diode which is fabricated by separating a growth substrate in a wafer level. According to the present invention, the light emitting diode comprises: a base; a light emitting structure positioned on the base; and a plurality of reflective electrode layers positioned between the base and the light emitting structure. The base comprises: at least two bulk electrodes which are electrically connected to the light emitting structure; and a mold which is arranged between the bulk electrodes to surround the bulk electrodes. The bulk electrodes comprise a concave portion and a convex portion of which surfaces, facing each other, are engaged with each other, wherein the convex portions comprises a section in which a width thereof changes in accordance with a protruding direction. |
