| 摘要 |
A manufacturing apparatus of a SiC single crystal which facilitates feeding of carbon to the vicinity of a SiC seed crystal. A control unit controls a induction heating unit such that frequency f (Hz) of alternating current to be passed to the induction heating unit satisfies Formula (1), where D1 (mm) indicates a permeation depth of electromagnetic waves into a side wall of a crucible by the induction heating unit, D2 (mm) indicates a permeation depth of electromagnetic waves into a SiC solution, T (mm) indicates a thickness of the side wall of the crucible, and R (mm) indicates an inner radius of the crucible: D �¢ 1 - T × D �¢ 2 / R > 1
where, D1 is defined by Formula (2), and D2 by Formula (3): D �¢ 1 = 503292 × 1 / f × Ãc × ¼c 1 / 2 D �¢ 2 = 503292 × 1 / f × Ãs × ¼s 1 / 2
where, Ãc is an electric conductivity (S/m) of the sidewall, and Ãs is an electric conductivity (S/m) of the SiC solution; µc is a relative permeability (dimensionless quantity) of the sidewall, and µs is a relative permeability (dimensionless quantity) of the SiC solution. |
