发明名称 薄膜トランジスタ、薄膜トランジスタアレイ基板、フレキシブル表示素子、フレキシブル表示装置及び薄膜トランジスタアレイ基板の製造方法
摘要 <P>PROBLEM TO BE SOLVED: To provide a thin film transistor, a thin film transistor array substrate, a flexible display element, a flexible display device, and a manufacturing method of the thin film transistor array substrate which are suitable for the size increase. <P>SOLUTION: A thin film transistor 200 formed in a flexible resin substrate 60 has a gate and channel integrally formed part 50 where a wire 10 where a part of or an entire peripheral surface is covered by a conductive material 20, an insulation film 30 covering the conductive material, and a thin film semiconductor 40 formed on the conductive material through the insulation film are integrally formed. The gate and channel integrally formed part 50 is provided on a surface or a predetermined position in the resin substrate, and first and second electrodes 70 and 80 are formed at both sides of the thin film semiconductor so as to connect therewith. <P>COPYRIGHT: (C)2013,JPO&INPIT
申请公布号 JP5856429(B2) 申请公布日期 2016.02.09
申请号 JP20110228713 申请日期 2011.10.18
申请人 日本放送協会 发明人 佐藤 弘人;中嶋 宜樹;藤崎 好英;平野 芳邦;木下 延博;室井 哲彦;薄井 武順;石井 啓二
分类号 H01L21/336;G02F1/1368;G09F9/00;G09F9/30;H01L21/3205;H01L21/768;H01L23/522;H01L23/532;H01L29/41;H01L29/423;H01L29/49;H01L29/786 主分类号 H01L21/336
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