发明名称 Bolometer and preparation method thereof
摘要 A bolometer and a preparation method thereof. The bolometer includes: an infrared detection element (1) and a readout circuit (2), wherein the infrared detection element (1) is formed on one side of a first substrate (100), and an edge of the infrared detection element (1) is provided with an electrode hole (9), and the readout circuit (2) is formed on one side of a second substrate (200) and the readout circuit (2) has an electrode, the first substrate (100) is formed thereon with a silicon via (8) passing through the first substrate (100) and filed with a conductive material, the electrode hole (9) of the infrared detection element (1) is electrically connected to the electrode of the readout circuit (2) via the conductive material filled in the silicon via (8). The following defects are overcome: bolometers in the prior art need to flatten the silicon wafer surface with a suitable chemical-mechanical polishing process after a readout circuit thereof has been manufactured, the circuit is large in area, and the requirements of the system integration process are high.
申请公布号 US9258894(B2) 申请公布日期 2016.02.09
申请号 US201214353020 申请日期 2012.07.25
申请人 Tsinghua University 发明人 Cai Jian;Wang Qian;Liu Ziyu;Hu Yang
分类号 G01J5/20;H01L27/14;H01L31/00;H05K1/11;G01J5/02;G01J5/00;H01L27/144;H01L31/02;G01J5/10;G01J5/24;H01L27/146;H01L21/683;H01L23/48 主分类号 G01J5/20
代理机构 Blakely, Sokoloff, Taylor & Zafman LLP 代理人 Blakely, Sokoloff, Taylor & Zafman LLP
主权项 1. A bolometer, comprising: a thermal radiation measurement element and a readout circuit, wherein the thermal radiation measurement element is formed on one side of a first substrate, an edge of the thermal radiation measurement element is provided with an electrode hole, the readout circuit is formed on one side of a second substrate and has an electrode, the first substrate is formed thereon with a silicon via passing through the first substrate and filled with a conductive material, and the electrode hole of the thermal radiation measurement element is electrically connected to the electrode of the readout circuit via the conductive material filled in the silicon via by using a metallic micro convex point, micro-column or pad structure, wherein the infrared detection element comprises a protective layer on an interconnecting layer on a thermosensitive element layer on a first portion of a supporting layer over a reflecting layer; wherein a cavity is formed between the reflecting layer and the first portion of the supporting layer; and wherein the interconnecting layer is connected to the electrode hole formed in a second portion of the supporting layer.
地址 Beijing CN