发明名称 |
Copper alloy conductor, and trolley wire and cable using same, and copper alloy conductor fabrication method |
摘要 |
A copper alloy conductor has a copper alloy material which has a copper parent material with 0.001 to 0.1 wt % (=10 to 1000 wt·ppm) of oxygen and 0.15 to 0.70 wt % (exclusive of 0.15 wt %) of Sn. A crystalline grain to form a crystalline structure of the copper alloy material has an average diameter of 100 μm or less, and 80% or more of an oxide of the Sn is dispersed in a matrix of the crystalline structure as a fine oxide grain with an average diameter of 1 μm or less. |
申请公布号 |
US9255311(B2) |
申请公布日期 |
2016.02.09 |
申请号 |
US200611328072 |
申请日期 |
2006.01.10 |
申请人 |
Hitachi Metals, Ltd. |
发明人 |
Kuroda Hiromitsu;Kuroki Kazuma;Aoyama Seigi;Hiruta Hiroyoshi |
分类号 |
C22C9/02;C22F1/08;B60M1/13;H01B1/02 |
主分类号 |
C22C9/02 |
代理机构 |
McGinn IP Law Group, PLLC |
代理人 |
McGinn IP Law Group, PLLC |
主权项 |
1. A Cu—Sn alloy conductor, comprising:
a Cu—Sn alloy material consisting of copper, 0.001 to 0.1 wt % of oxygen, 0.15 to 0.70 wt % (exclusive of 0.15 wt %) of Sn, and inevitable impurities, wherein a crystalline grain to form a crystalline structure of the Cu—Sn alloy material has an average diameter of 100 μm or less, and sub-boundaries are formed in the crystalline grain, wherein an oxide of the Sn is crystallized or precipitated in a matrix of the crystalline structure, wherein 80% or more of the oxide of the Sn is dispersed in the matrix of the crystalline structure as a fine oxide grain with an average diameter of 1 um or less, wherein a cross-sectional area of the Cu—Sn alloy conductor is in a range from 110 mm2 to 170 mm2, wherein a tensile strength of the Cu—Sn alloy conductor having the cross-sectional area is 420 MPa or more, and wherein a conductivity of the Cu—Sn alloy conductor having the cross-sectional area is 60% IACS or more. |
地址 |
Tokyo JP |