| 摘要 |
PROBLEM TO BE SOLVED: To provide an imaging device capable of increasing the capacitance value of a capacitor, while maintaining the sensitivity of a photoelectric conversion unit, in a configuration for expanding the dynamic range by connecting the capacitor with a FD, and to provide a method of manufacturing an imaging device.SOLUTION: An imaging device includes a photoelectric conversion unit having a PN junction constituted of a first semiconductor region and a second semiconductor region, and capable of storing signal charges in the second semiconductor region, an amplification transistor for amplifying a signal based on the signal charges, and a capacitor having a PN junction constituted of a third semiconductor region of the same conductivity type as the first semiconductor region and a fourth semiconductor region of opposite conductivity type from the third semiconductor region, and has a plurality of pixels capable of changing the capacitance value of the input node of an amplification transistor by switching the connection state of a capacitor. In the PN junction surface of a capacitor, the added impurity concentration of the same conductivity type as the third semiconductor region is higher than that of the same conductivity type as the first semiconductor region, in the PN junction surface of the photoelectric conversion unit.SELECTED DRAWING: Figure 4 |
