| 发明名称 |
RESIST REMOVING LIQUID, RESIST REMOVAL METHOD USING SAME AND METHOD FOR PRODUCING PHOTOMASK |
| 摘要 |
A resist removal method includes removing a resist provided on a photomask substrate by bringing a resist removing liquid into contact with the resist in patterning of a photomask for EUV lithography in which the resist removing liquid contains an alkali compound, a specific nitrogen-containing compound, and water, and a content of the water is more than 50% by mass. |
| 申请公布号 |
US2016033856(A1) |
申请公布日期 |
2016.02.04 |
| 申请号 |
US201514883730 |
申请日期 |
2015.10.15 |
| 申请人 |
FUJIFILM Corporation |
发明人 |
MIZUTANI Atsushi |
| 分类号 |
G03F1/22;B08B3/08;G03F7/42 |
主分类号 |
G03F1/22 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A resist removal method comprising:
removing a resist provided on a photomask substrate by bringing a resist removing liquid into contact with the resist when a photomask for EUV lithography is produced, wherein the resist removing liquid contains an alkali compound, a specific nitrogen-containing compound, and water, and a content of the water is more than 50% by mass. |
| 地址 |
Tokyo JP |
