Thin Active Layer Fishbone Photodiode With A Shallow N+ Layer and Method of Manufacturing the Same

摘要

The present invention is directed toward a detector structure, detector arrays, and a method of detecting incident radiation. The present invention comprises a photodiode array and method of manufacturing a photodiode array that provides for reduced radiation damage susceptibility, decreased affects of crosstalk, reduced dark current (current leakage) and increased flexibility in application.

主权项

1. A photodiode array comprising:
a thin active layer substrate having at least a front side and a back side; a plurality of photodiodes integrally formed in the thin active layer substrate forming said array; a plurality of metal contacts provided on said front side, wherein the fabrication of said array comprises:
coating said front side and said back side of said substrate with an oxide layer via mask oxidation;coating said front side of said substrate with a photoresist layer;masking said front side of said substrate with a p+ lithography mask;selectively etching the oxide layer on said front side said substrate wafer, wherein the p+ lithography mask is used to reveal p+ diffusion regions on said front side and etching the oxide coating on said back side of said substrate completely;diffusing a p+ layer on said front side of said substrate forming p+ diffusion regions;applying a drive-in oxidation layer on said front side of said substrate;coating said front side of said substrate with a photoresist layer;masking said front side of said substrate with a n+ lithography mask to form at least one active area etch pattern;selectively etching the photoresist layer on said front side of said substrate using said active area etch pattern to reveal n+ diffusion regions on said front side;diffusing a n+ layer on said front side of said substrate forming shallow n+ regions between adjacent p+ regions;performing a drive-in oxidation on said front side of said substrate;coating at least one exposed surface on said front side of said substrate with an oxide layer;coating said front side of said substrate with a silicon nitride layer;coating said front side of said substrate with a photoresist layer;masking said front side of said substrate wafer using a contact window mask;selectively etching the front side of the substrate using said contact window mask to form at least one contact window;metallizing said front side and said back side of said substrate;coating said front side of said substrate with a photoresist layer; andmasking and selectively etching said front side of said substrate to form metal contacts.